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2SC3138

Part Number 2SC3138
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Mar 22, 2005
Detailed Description 2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3138 High Voltage Amplifier Applications H...
Datasheet 2SC3138




Overview
2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3138 High Voltage Amplifier Applications High Voltage Switching Applications Unit: mm • High voltage: VCBO = 200 V (max) VCEO = 200 V (max) • Small flat package • Complementary to 2SA1255 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 200 V 200 V 5 V 50 mA 20 mA 150 mW 125 °C −55 to 125 °C JEDEC JEITA TOSHIBA TO-236MOD SC-59 2-3F1A Note: Using continuously un...






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