Ordering number:EN1066A
NPN Epitaxial Planar Silicon Transistor
2SC3142
High-Frequency General-Purpose Amplifier Applications
Features
· FBET series.
· Compact package enabling compactness of sets.
· High fT and small cre (fT=750MHz typ, cre=0.
6 typ).
Package Dimensions
unit:mm 2018A
[2SC3142]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base
Voltage Collector-to-Emitter
Voltage Emitter-to-Base
Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature
VCBO VCEO VEBO
IC PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC C...