isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC3235
DESCRIPTION ·Low Collector Saturation
Voltage ·High switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Especially suited for high
voltage,high speed and
high power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
500
V
VCEO
Collector-Emitter
Voltage
400
V
VEBO
Emitter-Base
Voltage
7
V
IC
Collector Current-Continuous
2
A
ICM
Collector Current-Pulse
4
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.
5
A
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