isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
500
V
VCEO
Collector-Emitter
Voltage
400
V
VEBO
Emitter-Base
voltage
7
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
20
A
90
W
150
℃
Tstg
Storage Temperature Range
...