:
2SC3298 2SC3298A 2SC3298B
)
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS.
DRIVER STAGE AMPLIFIER APPLICATIONS.
FEATURES
.
High Transition Frequency
:
fT=100MHz
(Typ .
.
Complementary to 2SA1306, 2SA1306A, 2SA1306B
Unit in mm
1Q3MAX.
7.
0 0Z.
2± 0.
2
/
/r\r '-ra J
s d
:.
:
X
oL +i
s
to
MAXIMUM RATINGS
CHARACTERISTIC
Collector-Base
Voltage
2SC3298 2SC3298A 2SC3298B
Collector-Emitter
Voltage
2SC3298 2SC3298A 2SC3298B
Emitter-Base
Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25°C)
Junction Temperature
Storage Temperature Range
SYMBOL VCBO
v CEO v EBO ic IB
Tstg
RATING 160 180 200 160 180 200
UNIT
1.
5 0.
15
20
15...