TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3325
Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications
2SC3325
Unit: mm
• Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) • High
voltage: VCEO = 50 V (min) • Complementary to 2SA1313 • Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC Tj Tstg
50
V
50
V
5
V
500
mA
50
mA
200
mW
150
°C
−55 to 150
°...