TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3326
For Muting and Switching Applications
2SC3326
Unit: mm
AEC-Q101 Qualified (Note1).
High emitter-base
voltage: VEBO = 25 V High reverse hFE: Reverse hFE = 150 (typ.
) (VCE = −2 V, IC = −4 mA) Low on resistance: RON = 1 Ω (typ.
) (IB = 5 mA) High DC current gain: hFE = 200 to 1200 Small package
Note1: For detail information, please contact our sales.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Base current Collector power dissipation
Junction temperature
Storage temperature range
VCBO
50
V
...