2SC3328
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3328
Power Amplifier Applications Power Switching Applications
Unit: mm
• • •
Low saturation
voltage: VCE (sat) = 0.
5 V (max) (IC = 1 A) High-speed switching: tstg = 1.
0 µs (typ.
) Complementary to 2SA1315
Maximum Ratings (Ta = 25°C)
Characteristics Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 80 80 5 2 1 900 150 −55 to 150 Unit V V V A A mW °C °C
JEDEC JEITA TOSHIBA
TO-92MOD ― 2-5J1A
Weight: 0.
36 g (typ.
)
1
2004-07-07
Free Datasheet http:/...