2SC3330 NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into five groups, R, O, Y, G and L, according to its DC current gain.
On special request, these transistors can be manufactured in different pin configurations.
1.
Emitter 2.
Collector 3.
Base TO-92 Plastic Package Weight approx.
0.
19g
Absolute Maximum Ratings (Ta = 25℃)
Parameter Collector Base
Voltage Collector Emitter
Voltage Emitter Base
Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC Ptot Tj TS
Value 60 50 5 200 300 150
-55 to +150
Unit V V V mA
mW OC OC
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7/15/2011
Characteristics ...