isc Silicon NPN Power Transistor
2SC3352
DESCRIPTION
·
·Collector-Emiiter Sustaining
Voltage-
: VCEO(SUS)= 500V(Min.
)
·Low Collector Saturation
Voltage
: VCE(sat)= 1.
0V(Max.
)@ IC= 1A
·High Speed Switching
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
800
V
VCEO
Collector-Emitter
Voltage
500
V
VEBO
Emitter-Base
Voltage
8
V
IC
Collector Current-Continuous
1.
5
A
ICM
Collector Current-Peak
3
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25℃ PC
Collector Po...