SMD Type
NPN Silicon Epitaxial Transistor 2SC3360
SOT-23
+0.
1 2.
9-0.
1 +0.
1 0.
4-0.
1
Transistors
Unit: mm
High DC current gain.
hFE=90 to 450
+0.
1 2.
4-0.
1
High
voltage VCEO=200V
+0.
1 1.
3-0.
1
1
+0.
1 0.
95-0.
1 +0.
1 1.
9-0.
1
2
0.
55
0.
4
Features
3
+0.
05 0.
1-0.
01
+0.
1 0.
97-0.
1
1.
Base 2.
Emitter 3.
collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 200 200 5 100 200 150 -55 to +150 Unit V V V mA mW
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC c...