SMD Type
High-
Voltage Switching Applications 2SC3645
Transistors
Features
Adoption of FBET Process High Breakdown
Voltage (VCEO = 160V) Excellent Linearlity of hFE and Small Cob Fast Switching Speed
Absolute Maximum Ratings Ta = 25
Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage temperature Range * Mounted on ceramic board (250 mm x 0.
8 mm)
2
Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg
Rating 180 160 5 140 200 500 1.
3 150 -55 to +150
Unit V V V mA mA mW W
Electrical Characteristics Ta = 25
Parameter Collector Cut-off Current Emitter Cut-off Current DC C...