TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
2SC3672
2SC3672
High-
Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
Unit: mm
• High breakdown
voltage: VCBO = 300 V, VCEO = 300 V • Low saturation
voltage: VCE (sat) = 0.
5 V (max) • Small collector output capacitance: Cob = 3 pF (typ.
) • Complementary to 2SA1432.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC Tj Tstg
...