INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3789
DESCRIPTION ·High Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 300V(Min) ·Complement to Type 2SA1479
APPLICATIONS ·High-definition CRT display.
·Color TV chroma output, high breakdown
voltage drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
300 V
VCEO
Collector-Emitter
Voltage
300 V
VEBO
Emitter-Base
Voltage
5V
IC Collector Current-Continuous
0.
1 A
ICM Collector Current-Peak
Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
0.
2 A
7 W
1.
5
150 ℃
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