INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3856-P
DESCRIPTION ·High Collector-Emitter Breakdown
Voltage-
: V(BR)CEO=180V(Min) ·Good Linearity of hFE
APPLICATIONS ·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base
Voltage
200 V
VCEO
Collector-Emitter
Voltage
180 V
VEBO
Emitter-Base
Voltage
6V
IC Collector Current-Continuous
15
A
IB Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
4A 130 W 150 ℃
Tstg Storage Temperature Range -55~150 ℃
isc Website：www.
iscsemi.
cn
INCHANGE Semiconductor
isc Silicon NPN Power...