IRGS4615DPbF IRGB4615DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 15A, TC = 100°C tsc 5µs, Tjmax = 175°C G E E G G C C C C E VCE(on) typ.
= 1.
55V @ 8A n-channel G D2-Pak IRGS4615DPbF TO-220AB IRGB4615DPbF C E Applications • Appliance Drives • Inverters • UPS Features Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE(ON) temperature coefficient and tighter distribution of parameters 5μs short circuit SOA Lead-free, RoHS compliant Gate Collector Em itter → Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switchi...

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