Power Transistors
2SC3975
Silicon NPN triple diffusion planar type
For high breakdown
voltage high-speed switching ■ Features
(0.
7)
15.
0±0.
3 11.
0±0.
2
Unit: mm 5.
0±0.
2
(3.
2)
21.
0±0.
5 15.
0±0.
2
• High-speed switching • High collector-base
voltage (Emitter open) VCBO
φ 3.
2±0.
1
• Wide safe operation area • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw
2.
0±0.
2
2.
0±0.
1
/ ■ Absolute Maximum Ratings TC = 25°C
16.
2±0.
5 (3.
5)
Solder Dip
1.
1±0.
1
0.
6±0.
2
Parameter
Symbol Rating
Unit
e pe) Collector-base
voltage (Emitter open) VCBO
800
V
c e.
d ty Collector-emitter
voltage (E-B short) VCES
800
...