isc Silicon NPN Power Transistor
DESCRIPTION ·High Switching Speed ·High Breakdown
Voltage-
: V(BR)CBO= 1100V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base
Voltage
1100
V
VCEO
Collector-Emitter
Voltage
800
V
VEBO
Emitter-Base
Voltage
7
V
IC
Collector Current-Continuous
25
A
ICM
Collector Current-Pulse
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
60
A
300
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC3994
isc website：www.
iscsemi.
com
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