isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4024
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 50V(Min) ·High DC Current Gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·DC-DC converter,Emergency lighting Inverter
and general purpose
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base
Voltage
100
V
VCEO
Collector-Emitter
Voltage
50
V
VEBO
Emitter-Base
Voltage
15
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature
3
A
35
W
...