isc Silicon NPN Power Transistor
2SC4105
DESCRIPTION ·High Collector-Emitter Breakdown
Voltage
: V(BR)CEO= 400V(Min.
) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for switching regulator applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base
Voltage
500
V
VCEO Collector-Emitter
Voltage
400
V
VEBO Emitter-Base
Voltage
7
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
8
A
IB
Base Current-Continuous
1.
5
A
Collector Power Dissipation@TC=25℃
40
PC
W
Collector Power Dissipation@Ta=25℃ 1.
75
TJ
Junct...