TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4213
2SC4213
For Muting and Switching Applications
Unit: mm
High emitter-base
voltage: VEBO = 25 V High reverse hFE: Reverse hFE = 150 (typ.
) (VCE = −2 V, IC = −4 mA) Low on resistance: RON = 1 Ω (typ.
) (IB = 5 mA) High DC current gain: hFE = 200 to 1200 Small package
Absolute Maximum Ratings (Ta 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Base current Collector power dissipation
Junction temperature
Storage temperature range
VCBO
50
V
VCEO
20
V
VEBO
25
V
IC
300
mA
IB
60
mA
PC (Note 1, 3)
200
mW
PC (Note 2...