isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining
Voltage-
: VCEO(SUS)= 800V(Min) ·Fast Switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Color TV horizontal output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
1200
V
VCEO
Collector-Emitter
Voltage
800
V
VEBO
Emitter-Base
Voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
6
A
IB
Base Current-Continuous
1
A
IBM
Base Current-Peak
PT
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
2
A
80
W
150
℃
Tstg
St...