2SC4296
Silicon NPN Triple Diffused Planar Transistor (High
Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4296 500 400 10 10(Pulse20) 4 75(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Switching Regulator and General Purpose External Dimensions FM100(TO3PF)
0.
8±0.
2 15.
6±0.
2 5.
5±0.
2 3.
45 ±0.
2 5.
5 ø3.
3±0.
2 1.
6
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=6A IC=6A, IB=1.
2A IC=6A, IB=1.
2A VCE=12V, IE=–0.
7A VCB=10V, f=1MHz
(Ta=25°C) 2SC4296 100max 100max 400min 10 to 30 0.
5max 1.
3max 10typ 85typ V V MHz pF Unit
µA
V
2...