2SC4299
Silicon NPN Triple Diffused Planar Transistor (High
Voltage Switchihg Transistor) sAbsolute maximum ratings
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4299 900 800 7 3(Pulse6) 1.
5 70(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C
Application : Switching Regulator and General Purpose
(Ta=25°C) 2SC4299 100max 100max 800min 10 to 30 0.
5max 1.
2max 6typ 50typ V V
16.
2
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=1A IC=1A, IB=0.
2A IC=1A, IB=0.
2A VCE=12V, IE=–0.
3A VCB=10V, f=1MHz
External Dimensions FM100(TO3PF)
0.
8±0.
2 15.
6±0.
2 5.
5±0.
2 3.
45 ±0.
2 5.
5 ø3.
3±0.
2 1.
6
Unit
µA
23.
0±0.
3
V
9.
5±0.
2
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