isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4381
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 150V(Min) ·DC Current Gain-
: hFE= 60(Min)@ (VCE= 10V, IC= 0.
7A) ·Complement to Type 2SA1667 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for TV vertical output ,audio output driver and
general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
150
V
VCEO
Collector-Emitter
Voltage
150
V
VEBO
Emitter-Base
Voltage
6
V
IC
Collector Current-Continuous
2
A
IB
Base Current-Continuous
PC
Collector Power Di...