SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistor 2SC4390
Features
Adoption of MBIT process.
High DC current gain (hFE=800 to 3200).
Large current capacity (IC=2A).
Low collector-to-emitter saturation
voltage (VCE(sat) 0.
3V).
15V).
High VEBO (VEBO
Absolute Maximum Ratings Ta = 25
Parameter Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Collector current (pulse) Base current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 20 10 15 2 4 0.
4 500 150 -55 to +150 Unit V V V A A A mW
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SMD Type
2SC4390
Electrical Char...