isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4421
DESCRIPTION
·
·Collector-Base Breakdown
Voltage-
: V(BR)CBO= 500V(Min.
)
·Wide Area of Safe Operation
·High Speed Switching
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
500
V
VCES
Collector-Emitter
Voltage
500
V
VCEO
Collector-Emitter
Voltage
400
V
VEBO
Emitter-Base
Voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
6
A
IB
Base Current-Continuous
Collect...