isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4437
DESCRIPTION ·High Breakdown
Voltage-
: V(BR)CBO= 1500V(Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Ultrahigh-definition color display horizontal deflection
output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
1500
V
VCEO
Collector-Emitter
Voltage
800
V
VEBO
Emitter-Base
Voltage
7
V
IC
Collector Current-Continuous
5
A
ICP
Collector Current-Peak
Collector Power Dissipation
@ Ta=25℃
PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
...