isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown
Voltage-
: V(BR)CEO= 500V(Min) ·Fast Switching speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for switching regulator applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base
Voltage
800
V
VCEO
Collector-Emitter
Voltage
500
V
VEBO
Emitter-Base
Voltage
7
V
IC
Collector Current-Continuous
25
A
ICP
Collector Current-Pulse
40
A
IB
Base Current-Continuous
Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
8
A
65 W
3
150
℃
...