DATA SHEET
SILICON POWER TRANSISTOR
2SC4553
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SC4553 is a power transistor designed especially for low
com
PACKAGE DRAWING (UNIT: mm)
collector saturation
voltage and features large current switching at a low power dissipation.
In addition, a high hFE enables alleviation of
the driver load.
FEATURES
• High hFE and low VCE(sat): hFE ≅ 800 (VCE = 2 V, IC = 3 A) VCE(sat) ≅ 0.
12 V (IC = 3 A, IB = 0.
03 A) • On-chip C to E damper diode • Mold package that does not require an insulating board or insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Collector to base
voltage Collector to emitter
voltage ...