isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4744
DESCRIPTION ·High Breakdown
Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for character display horizontal deflection
output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter
Voltage
1500
V
VEBO
Emitter-Base
Voltage
6
V
IC(peak) Collector Current-Peak
7
A
IC(surge) Collector Current-Surge
16
A
ID
C-E Diode Forward Current
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
7
A
50...