isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown
Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation
Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Horizontal deflection output for high resolution display,
color TV ·High speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
1500
V
VCEO
Collector-Emitter
Voltage
600
V
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current- Continuous
8
A
ICP
Collector Current-Pulse
16
A
IB
Base Current- Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
4
A
...