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2SC5206


Part Number 2SC5206
Manufacturer Hitachi
Title Silicon NPN Transistor
Description 2SC5206 Silicon NPN Triple Diffused Application High power switching Features • High breakdown voltage VCBO = 500 V • Isolated package TO-220FM O...
Features
• High breakdown voltage VCBO = 500 V
• Isolated package TO-220FM Outline TO-220FM 123 1. Base 2. Collector 3. Emitter 2SC5206 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collec...

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2SC5209 : SMD Type Small Signal Transistor 2SC5209 Transistors Features High voltage VCEO=50V. Small package for mounting. High hFE = 600 to 1800. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Emitter-base voltage Collector-emitter voltage Peak collector current Collector current Collector dissipation Jumction temperature Storage temperature Symbol VCBO VEBO VCEO ICM IC PC Tj Tstg Rating 50 6 50 2 1 500 150 -55 to +150 Unit V V V A A mW Electrical Characteristics Ta = 25 Parameter Colllector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltag.

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2SC5208 : 2SC5208 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5208 High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications DC-AC Inverter Applications • • High-speed switching: tr = 1.0 μs (max) ,tf = 1.5 μs (max) High breakdown voltage: VCEO = 400 V Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 600 400 7 0.8 1.5 0.5 1.3 150 −55~150 Unit V V V A JEDEC A W °C °C ― ― 2-8M1A JEITA TOSHIBA Weight: 0.55.




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