| Part Number | 2SC5206 |
| Manufacturer | Hitachi |
| Title | Silicon NPN Transistor |
| Description | 2SC5206 Silicon NPN Triple Diffused Application High power switching Features • High breakdown voltage VCBO = 500 V • Isolated package TO-220FM O... |
| Features |
• High breakdown voltage VCBO = 500 V • Isolated package TO-220FM Outline TO-220FM 123 1. Base 2. Collector 3. Emitter 2SC5206 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collec... |
| File Size | 37.60KB |
| Datasheet |
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2SC520A : 2SC519AI 2SC520A 2SC521AJ SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER, POWER SWITCHING APPLICATIONS. DC-DC CONVERTER, REGULATOR APPLICATIONS. INDUSTRIAL APPLICATIONS unit in mm FEATURES . High Voltage : VCBO=130V(2SC519A) ,VCEO=110V(2SC519A) • High Collector Power Dissipation : P C=50W (Tc=25°C) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base 2SC519A Voltage 2SC520A 2SC521A CollectorEmitter Voltage 2SC519A 2SC520A 2SC521A SYMBOL 'CBO 'CEO RATING 130 100 70 110 80 50 UNIT 025.OMAX. 21.0MAZ. tX3 - 0.0 9 *1.0-0.03 Emitter-Base Voltage Collector Current Base Current VEBO Collector Power Dissipation Tc=25°C (Note) 50 25 Junction Temperature 150 Storage Temper.
2SC520A : www.DataSheet.net/ Datasheet pdf - http://www.DataSheet4U.co.kr/ www.DataSheet.net/ Datasheet pdf - http://www.DataSheet4U.co.kr/ www.DataSheet.net/ Datasheet pdf - http://www.DataSheet4U.co.kr/ www.DataSheet.net/ Datasheet pdf - http://www.DataSheet4U.co.kr/ www.DataSheet.net/ Datasheet pdf - http://www.DataSheet4U.co.kr/ .
2SC5209 : SMD Type Small Signal Transistor 2SC5209 Transistors Features High voltage VCEO=50V. Small package for mounting. High hFE = 600 to 1800. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Emitter-base voltage Collector-emitter voltage Peak collector current Collector current Collector dissipation Jumction temperature Storage temperature Symbol VCBO VEBO VCEO ICM IC PC Tj Tstg Rating 50 6 50 2 1 500 150 -55 to +150 Unit V V V A A mW Electrical Characteristics Ta = 25 Parameter Colllector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltag.
2SC5209 : ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION .
2SC5208 : 2SC5208 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5208 High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications DC-AC Inverter Applications • • High-speed switching: tr = 1.0 μs (max) ,tf = 1.5 μs (max) High breakdown voltage: VCEO = 400 V Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 600 400 7 0.8 1.5 0.5 1.3 150 −55~150 Unit V V V A JEDEC A W °C °C ― ― 2-8M1A JEITA TOSHIBA Weight: 0.55.