isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown
Voltage-
：VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation
Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Horizontal deflection output for high medium resolution
display& color TV.
·High speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
1500
V
VCEO
Collector-Emitter
Voltage
600
V
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current- Continuous
8
A
ICM
Collector Current- Continuous
16
A
IB
Base Current- Continuous
PC
Collector Power Dissipation @ TC=...