TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5352
Switching Regulator and High-
Voltage Switching Applications High-Speed DC-DC Converter Applications
2SC5352
Unit: mm
• Excellent switching times: tr = 0.
5 µs (max), tf = 0.
3 µs (max) (IC = 4 A)
• High breakdown
voltage: VCEO = 400 V
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base
voltage
Collector-emitter
voltage
Emitter-base
voltage
Collector current
DC Pulse
Base current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
Rating
600 400
7 10 15 5
80
150 −55 to 150
Unit V V V
A
A
W
°C °C
JEDEC
―
JEITA
―
TOSHIBA
2-16C1A
W...