TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5354
High-Speed and High-
Voltage Switching Applications Switching Regulator Applications High-Speed DC-DC Converter Applications
2SC5354
Unit: mm
• Excellent switching times: tr = 0.
7 μs (max) tf = 0.
5 μs (max) (IC = 2 A)
• High breakdown
voltage: VCEO = 800 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base
voltage
Collector-emitter
voltage
Emitter-base
voltage
Collector current
DC Pulse
Base current
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
900
V
800
V
7
V
5 A
8
2
A
100
W
150
°C
−55 to 15...