Power Transistors
2SC5393
Silicon NPN triple diffusion planar type
For high breakdown
voltage high-speed switching
10.
0±0.
2 5.
5±0.
2
Unit: mm
4.
2±0.
2 2.
7±0.
2
4.
2±0.
2
16.
7±0.
3 7.
5±0.
2 0.
7±0.
1
I Features
• High-speed switching
• High collector to base
voltage VCBO • Wide area of safe operation (ASO)
• Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one
/ screw
14.
0±0.
5 Solder Dip
(4.
0)
e pe) I Absolute Maximum Ratings TC = 25°C
c e.
d ty Parameter
Symbol Rating
Unit
n d stag tinue Collector to base
voltage
VCBO
600
V
le on Collector to emitter
voltage
VCES
600
V
a elifecyc disc VCEO
400
V
n u ...