isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown
Voltage-
: VCBO= 1600V (Min) ·High Speed Switching ·High Reliability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Color TV horizontal deflection output ·Color display horizontal deflection output
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
1600
V
VCEO
Collector-Emitter
Voltage
800
V
VEBO
Emitter-Base
Voltage
6
V
IC
Collector Current- Continuous
10
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
25
A
70
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2...