Ordering number:ENN6341
NPN Epitaxial Planar Silicon Transistor
2SC5539
VHF to UHF Low-Noise Wide-Band Amplifier Applications
Features
· Low noise : NF=1.
1dB typ (f=1GHz).
· High gain : S21e2=12dB typ (f=1GHz).
· High cutoff frequency : fT=7.
5GHz typ.
· Ultrasmall, slim flat-lead package.
(1.
4mm × 0.
8mm × 0.
6mm)
Package Dimensions
unit:mm 2159
[2SC5539]
1.
4
0.
3
0.
25 3
0.
1
0.
8
0.
2
0.
3
1 0.
45
2
1.
4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base
Voltage Collector-to-Emitter
Voltage Emitter-to-Base
Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions
1 : Base 2 : Em...