2SC5585F
Elektronische Bauelemente
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High Current Low VCE(sat) - VCE(sat)İ 250mV at IC = 200mA/IB=10mA A
NPN Silicon General Purpose Transistor
FEATURES
SOT-523 Dim A B C D
S
2 3 Top View 1
Min 1.
50 0.
78 0.
80 0.
28 0.
90 0.
00 0.
10 0.
35 0.
49 1.
50
Max 1.
70 0.
82 0.
82 0.
32 1.
10 0.
10 0.
20 0.
41 0.
51 1.
70
MARKING CODE
BX
L B
G H J K L S
D
3.
Collector 2.
Base
G C J K
1.
Emitter
H
All Dimension in mm
Maximum Ratings (Ta=25 o C unless otherwise specified)
Parameter Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current (continuous) Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO...