Power Transistors
2SC5884
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV
Unit: mm
3.
0±0.
2
■ Features
9.
9±0.
3
4.
6±0.
2 2.
9±0.
2
15.
0±0.
3 8.
0±0.
2 1.
0±0.
1
• High breakdown
voltage: VCBO ≥ 1 500 V • Wide safe operation area
φ3.
2±0.
1
• Built-in dumper diode
■ Absolute Maximum Ratings TC = 25°C
/ Parameter
Symbol Rating
Unit
13.
7-+00.
.
25 2.
0±0.
2 4.
1±0.
2
Solder Dip
0.
76±0.
06 1.
45±0.
15
1.
2±0.
15
0.
75±0.
1
1.
25±0.
1 2.
6±0.
1
0.
7±0.
1
e Collector-base
voltage (Emitter open) VCBO
1 500
V
pe) Collector-emitter
voltage (E-B short) VCES
1 500
V
nc d ge.
ed ty Emitter-base
voltage (Collector open) VEBO
5
V
sta tinu Base current
IB
2
A
a e cycle iscon Coll...