Power Transistors com
2SC5954
Silicon NPN triple diffusion planar type
Unit: mm
For power amplification with high forward current transfer ratio ■ Features
• High forward current transfer ratio hFE which has satisfactory linearity.
• Low collector-emitter saturation
voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw.
9.
9±0.
3
3.
0±0.
5
4.
6±0.
2 2.
9±0.
2
13.
7±0.
2 4.
2±0.
2 Solder Dip
15.
0±0.
5
φ 3.
2±0.
1
1.
4±0.
2 1.
6±0.
2 0.
8±0.
1
2.
6±0.
1
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base
voltage (Emitter open) Collector-emitter
voltage (Base open) Emitter-base
voltage (Collector open) Collector current Peak collector current C...