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Ordering number : ENA0152
2SC5957M
2SC5957M
Features
• • • •
NPN Triple Diffused Planar Silicon Transistor
Switching Regulator Applications
High breakdown
voltage and high reliability.
High-speed switching.
Wide ASO.
Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base
Voltage Collector-to-Emitter
Voltage Emitter-to-Base
Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg PW≤300µs, duty cycle≤10% Conditions Ratings 500 400 7 10 20 3.
5 1.
75 Tc=25°C 50 150 --55 to +150 Unit V V V A A A W W °C °C
El...