2SC6026MFV
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC6026MFV
General-Purpose Amplifier Applications
• High
voltage and high current
: VCEO = 50 V, IC = 150 mA (max)
• Excellent hFE linearity : hFE (IC = 0.
1 mA)/hFE (IC = 2 mA) = 0.
95 (typ.
)
• High hFE
: hFE = 120 to 400
• Complementary to 2SA2154MFV
Absolute Maximum Ratings (Ta = 25°C)
1.
2 ± 0.
05
0.
8 ± 0.
05 0.
4 0.
4
0.
22 ± 0.
05
1.
2 ± 0.
05 0.
80 ± 0.
05
Unit: mm
0.
32 ± 0.
05
1
1
3 2
0.
13 ± 0.
05
Characteristic
Symbol
Rating
Unit
0.
5 ± 0.
05
Collector-base
voltage
VCBO
60
V
Collector-emitter
voltage Emitter-base
voltage Collector current Base current
VCEO VEBO
IC IB
50
V
5
V
150
mA
30
mA
VESM
...