TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6100
2SC6100
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
Unit: mm
2.
1±0.
1 1.
7±0.
1
0.
3-+00.
.
015
2.
0±0.
1 0.
65±0.
05
• High DC current gain: hFE = 400 to 1000 (IC = 0.
3 A) • Low collector-emitter saturation
voltage: VCE (sat) = 0.
14 V (max) • High-speed switching: tf = 120 ns (typ.
)
1
2
3
0.
166±0.
05
Absolute Maximum Ratings (Ta = 25°C)
0.
7±0.
05
Characteristics
Symbol
Rating
Unit
Collector-base
voltage
Collector-emitter
voltage
Collector-emitter
voltage
Emitter-base
voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Junction temperature Storage temperature rang...