Transistors
2SC0829 (2SC829)
Silicon NPN epitaxial planar type
For high-frequency amplification
Unit: mm
5.
0±0.
2
4.
0±0.
2
5.
1±0.
2
■ Features • Optimum for RF amplification, oscillation, mixing, and IF stage
of FM/AM radios
0.
7±0.
2 12.
9±0.
5
0.
7±0.
1
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
/ Collector-base
voltage (Emitter open) VCBO
30
V
0.
45+–00.
.
115
0.
45+–00.
.
115
e Collector-emitter
voltage (Base open) VCEO
20
V
c type) Emitter-base
voltage (Collector open) VEBO
5
V
n d ge.
ed Collector current
IC
30
mA
2.
3±0.
2
le sta ntinu Collector power dissipation
PC
400
mW
a e cyc isco Junction temperature
Tj
150
°C
life d, d Storage temperat...