isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector Current Capability ·High Collector Power Dissipation Capability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·TV horizontal deflection output applications.
·High
voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base
Voltage
300
V
VCEO Collector-Emitter
Voltage
150
V
VEBO Emitter-Base
Voltage
6
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
Collector Power Dissipation
Ta=25℃ PC
Collector Power Dissipation
TC=25℃
Tj
Junction T...