Transistor
2SD1149
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
+0.
2
2.
8 –0.
3
s Features
q q q q
0.
65±0.
15
1.
5 –0.
05
+0.
25
0.
65±0.
15
+0.
2 1.
1 –0.
1
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings 100 100 15 50 20 200 150 –55 ~ +150
Unit V V V mA mA mW ˚C ˚C
1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package
Marking symbol : 1V
s Electrical Characteristics
Parameter Collector cutoff current Collector to base
voltage Collector to emitte...