isc Silicon NPN Power Transistor
2SD1158
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 50V(Min) ·High DC Current Gain-
: hFE= 250V(Min.
) @IC= 1A ·Low Collector Saturation
Voltage ·High Reliability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operati
APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid sate relay ·General purpose power
amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
80
V
VCEO
Collector-Emitter
Voltage
50
V
VEBO
Emitter-Base
Voltage
10
V
IC
Collector Current-Continuous
8
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junct...