isc Silicon NPN Darlington Power Transistor
2SD1191
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 60V(Min) ·High DC Current Gain
: hFE= 2000(Min) @IC= 3.
5A ·Low Saturation
Voltage ·Complement to Type 2SB881 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay
drivers,
voltage regulator applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
70
V
VCEO
Collector-Emitter
Voltage
60
V
VEBO
Emitter-Base
Voltage
6
V
IC
Collector Current-Continuous
7
A
ICP
Collector Current-Peak
Collector Power Dissipation
@ Ta...